technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened p-channel mosfet qualified per mil-prf-19500/630 t4-lds-0126 rev. 1 (091145) page 1 of 5 devices levels 2N7389 2N7389u jansr(100k rad(si)) jansf(300k rad(si)) absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain C source voltage v ds -100 vdc gate C source voltage v gs 20 vdc continuous drain current t c = +25c i d1 -6.5 adc continuous drain current t c = +100c i d2 -4.1 adc max. power dissipation p tl 25 (1) w drain to source on state resistance r ds(on) 0.3 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 0.2 w/c for t c > +25c (2) v gs = -12vdc, i d = -4.1a pre-irradiation electri cal characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = -1madc v (br)dss -100 vdc gate-source voltage (threshold) v ds v gs , i d = -1.0ma v ds v gs , i d = -1.0ma, t j = +125c v ds v gs , i d = -1.0ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 -2.0 -1.0 -4.0 -5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = -80v v gs = 0v, v ds = -80v, t j = +125c i dss1 i dss2 -25 -0.25 adc madc static drain-source on-state resistance v gs = -12v, i d = -4.1a pulsed v gs = -12v, i d = -6.5a pulsed t j = +125c v gs = -12v, i d = -4.1a pulsed r ds(on)1 r ds(on)2 r ds(on)3 0.3 0.35 0.54 diode forward voltage v gs = 0v, i d = -6.5a pulsed v sd -3.0 vdc to-205af (modified to-39) jansr2N7389, jansf2N7389 see figure 1 18 pin leadless chip carrier jansr2N7389u, jansf2N7389u see figure 2 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened p-channel mosfet qualified per mil-prf-19500/630 t4-lds-0126 rev. 1 (091145) page 2 of 5 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on-state gate charge gate to source charge gate to drain charge v gs = -12v, i d = -6.5a v ds = -50v q g(on) q gs q gd 45 10 25 nc switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = -6.5a, v gs = -12vdc, gate drive impedance = 7.5 , v dd = -50vdc t d(on) t r t d(off) t f 30 50 70 70 ns diode reverse recovery time di/dt -100a/s, v dd -50v, i f = -6.5a t rr 250 ns post-irradiation electrical characteristics (3) (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = -1madc v (br)dss -100 vdc gate-source voltage (threshold) v ds v gs , i d = -1.0ma jansr v ds v gs , i d = -1.0ma jansf v gs(th)1 v gs(th)1 -2.0 -2.0 -4.0 -5.0 vdc gate current v gs = 20v, v ds = 0v i gss1 100 nadc drain current v gs = 0v, v ds = -80v i dss1 -25 adc static drain-source on-state voltage v gs = -12v, i d = -4.1a pulsed v ds(on) 1.23 vdc diode forward voltage v gs = 0v, i d = -6.5a pulsed v sd -3.0 vdc note: (3) post-irradiation electrical characteristics apply to devices subjected to steady st ate total dose irradiation testing in accordance with mil- std-750 method 1019. separate samples are tested for vg s bias (12v), and vds bias (80v) conditions. downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened p-channel mosfet qualified per mil-prf-19500/630 t4-lds-0126 rev. 1 (091145) page 3 of 5 single event effect (see) characteristics: heavy ion testing of the 2N7389 devi ce has been characterized at the te xas a&m cyclotron. the following soa curve has been established using the elements, let, range, and total energy conditions as show n: 2N7389 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 gate bias, v drain bias, v tamu ar let = 8.1 range=230um total energy=558mev tamu kr let = 26.8 range=170um total energy=1121mev tamu ag let = 40.6 range=150um total energy=1426mev tamu au let=80.2 range=155um total energy=1884mev it should be noted that total energy levels are considered to be a factor in see characterization. comparisons to other datasets should not be based on let alone. please consult factory for more information. downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened p-channel mosfet qualified per mil-prf-19500/630 t4-lds-0126 rev. 1 (091145) page 4 of 5 figure 1: case outline and pin conf iguration for jansr2N7389 & jansf2N7389 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com radiation hardened p-channel mosfet qualified per mil-prf-19500/630 t4-lds-0126 rev. 1 (091145) page 5 of 5 figure 2: case outline and pin config uration for jansr2N7389u & jansf2N7389u downloaded from: http:///
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